19
Read/Write Timing—bq4285L (TA = TOPR, VCC = 3.15V ± 0.45%)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Notes
tCYC
Cycle time
270
-
ns
tDSL
DS low or RD/WR high time
135
-
ns
tDSH
DS high or RD/WR low time
90
-
ns
tRWH
R/W hold time
0
-
ns
tRWS
R/W setup time
15
-
ns
tCS
Chip select setup time
8
-
ns
tCH
Chip select hold time
0
-
ns
tDHR
Read data hold time
0
-
40
ns
tDHW
Write data hold time
0
-
ns
tAS
Address setup time
30
-
ns
tAH
Address hold time
15
-
ns
tDAS
Delay time, DS to AS rise
15
-
ns
tASW
Pulse width, AS high
50
-
ns
tASD
Delay time, AS to DS rise
(RD/WR fall)
55
-
ns
tOD
Output data delay time from DS
rise (RD fall)
-
100
ns
tDW
Write data setup time
50
-
ns
tBUC
Delay time before update
-
244
-
s
tPI
Periodic interrupt time interval
----
See Table 3
tUC
Time of update cycle
-
1
-
s
bq4285E/L
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相关代理商/技术参数
BQ4285ES 制造商:未知厂家 制造商全称:未知厂家 功能描述:
BQ4285L 制造商:未知厂家 制造商全称:未知厂家 功能描述:Enhanced RTC With NVRAM Control
BQ4285LP 制造商:TI 制造商全称:Texas Instruments 功能描述:Enhanced RTC With NVRAM Control
BQ4285LQ 制造商:未知厂家 制造商全称:未知厂家 功能描述:
BQ4285LS 制造商:Rochester Electronics LLC 功能描述:- Bulk
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